VS-12FL10S05

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 12A DO203AA

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 12A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-12FL10S05

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-203AA
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Supplier Device Package	Supplier Device Package	Speed	Package / Case	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-12FL10S02	200 ns	100 V	1.4 V	12 A	150 °C	-65 C	Chassis Stud Mount	Standard	DO-203AA	DO-4	200 mA 500 ns	DO-203AA DO-4 Stud	50 µA
Vishay General Semiconductor - Diodes Division VS-12FL10S05	500 ns	100 V	1.4 V	12 A	150 °C	-65 C	Chassis Stud Mount	Standard	DO-203AA	DO-4	200 mA 500 ns	DO-203AA DO-4 Stud	50 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 4.48

General part information

Diode 100 V 12A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources