PJMD990N65EC_L2_00001

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Panjit International Inc.

650V SUPER JUNCTION MOSFET

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Panjit International Inc.

650V SUPER JUNCTION MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJMD990N65EC_L2_00001

Current - Continuous Drain (Id) @ 25°C	4.7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.7 nC
Input Capacitance (Ciss) (Max) @ Vds	306 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	47.5 W
Rds On (Max) @ Id, Vgs	990 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Panjit International Inc. PJMD990N65EC_L2_00001	4 V	MOSFET (Metal Oxide)	47.5 W	650 V	Surface Mount	4.7 A	N-Channel	306 pF	10 V	30 V	TO-252AA	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	9.7 nC	990 mOhm

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General part information

N-Channel 650 V 4.7A (Tc) 47.5W (Tc) Surface Mount TO-252AA

Technical documentation and resources