2SC5354-1(F)

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Toshiba Semiconductor and Storage

TRANS NPN 800V 5A TO-3PN

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Toshiba Semiconductor and Storage

TRANS NPN 800V 5A TO-3PN

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5354-1(F)

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	100 W
Supplier Device Package	TO-3P(N)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	800 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Transistor Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case	Operating Temperature	Current - Collector Cutoff (Max) [Max]
Toshiba Semiconductor and Storage 2SC5354-1(F)	800 V	Through Hole	NPN	100 W	1 V	5 A	10	TO-3P(N)	SC-65-3 TO-3P-3	150 °C	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	50	$ 2.87

General part information

Bipolar (BJT) Transistor NPN 800 V 5 A 100 W Through Hole TO-3P(N)

Technical documentation and resources