VMO650-01F

Obsolete

IXYS

MOSFET N-CH 100V 690A Y3-DCB

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Obsolete

IXYS

MOSFET N-CH 100V 690A Y3-DCB

Technical Specifications

Parameters and characteristics for this part

Specification	VMO650-01F

Current - Continuous Drain (Id) @ 25°C	690 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2300 nC
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Y3-DCB
Power Dissipation (Max) [Max]	2500 W
Rds On (Max) @ Id, Vgs [Max]	1.8 mOhm
Supplier Device Package	Y3-DCB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	6 V

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	FET Type	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
IXYS VMO650-01F	690 A	MOSFET (Metal Oxide)	100 V	6 V	20 V	Y3-DCB	N-Channel	Chassis Mount	Y3-DCB	1.8 mOhm	2300 nC	150 °C	-40 °C	10 V	2500 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 217.51

General part information

N-Channel 100 V 690A (Tc) 2500W (Tc) Chassis Mount Y3-DCB

Technical documentation and resources

No documents available