ZXT10P12DE6TA

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Diodes Inc

POWER BIPOLAR TRANSISTOR, 3A I(C), 12V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 6 PIN, SUPERSOT-6

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 3A I(C), 12V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 6 PIN, SUPERSOT-6

Technical Specifications

Parameters and characteristics for this part

Specification	ZXT10P12DE6TA

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300
Frequency - Transition	110 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	1.1 W
Supplier Device Package	SOT-23-6
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	12 V

PNP, 12V, 3A, SOT26

Part	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]
Diodes Inc ZXT10P12DE6TA	110 MHz	100 nA	PNP	12 V	-55 °C	150 °C	SOT-23-6	300	Surface Mount	3 A	SOT-23-6	300 mV	1.1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 12V, 3A, SOT26

Technical documentation and resources