1N5407-G

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Comchip Technology

DIODE GEN PURP 800V 3A DO27

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Comchip Technology

DIODE GEN PURP 800V 3A DO27

Technical Specifications

Parameters and characteristics for this part

Specification	1N5407-G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-27 (DO-201AD)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Technology
Comchip Technology 1N5407-G	1 V	Standard Recovery >500ns	200 mA	800 V	DO-27 (DO-201AD)	Through Hole	3 A	5 µA	125 °C	-65 C	DO-201AD Axial	Standard

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General part information

Diode 800 V 3A Through Hole DO-27 (DO-201AD)

Technical documentation and resources

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