FMM150-0075X2F

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IXYS

MOSFET 2N-CH 75V 120A I4-PAC

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IXYS

MOSFET 2N-CH 75V 120A I4-PAC

Technical Specifications

Parameters and characteristics for this part

Specification	FMM150-0075X2F

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	75 V
Gate Charge (Qg) (Max) @ Vgs	178 nC
Input Capacitance (Ciss) (Max) @ Vds	10500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUSi5-Pak™
Power - Max [Max]	170 W
Rds On (Max) @ Id, Vgs	5.8 mOhm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Mounting Type	Configuration
IXYS FMM150-0075X2F	178 nC	75 V	170 W	10500 pF	ISOPLUS i4-PAC™	5.8 mOhm	120 A	4 V	-55 °C	175 ░C	ISOPLUSi5-Pak™	MOSFET (Metal Oxide)	Through Hole	2 N-Channel (Dual) Asymmetrical

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General part information

Mosfet Array 75V 120A 170W Through Hole ISOPLUS i4-PAC™

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