
C2M0025120D
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TO-247-3 SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS
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C2M0025120D
ActiveWolfspeed
TO-247-3 SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS
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DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | C2M0025120D |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 90 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 161 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2788 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 463 W |
| Rds On (Max) @ Id, Vgs [Max] | 34 mOhm |
| Supplier Device Package | TO-247-3 |
| Vgs (Max) [Max] | 25 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
C2M0025120 Series
N-Channel 1200 V 90A (Tc) 463W (Tc) Through Hole TO-247-3
Documents
Technical documentation and resources