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C2M0025120D - Product Image

C2M0025120D

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TO-247-3 SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS

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C2M0025120D - Product Image

C2M0025120D

Active
Wolfspeed

TO-247-3 SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationC2M0025120D
Current - Continuous Drain (Id) @ 25°C90 A
Drain to Source Voltage (Vdss)1200 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs161 nC
Input Capacitance (Ciss) (Max) @ Vds2788 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]463 W
Rds On (Max) @ Id, Vgs [Max]34 mOhm
Supplier Device PackageTO-247-3
Vgs (Max) [Max]25 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 98.34
30$ 85.66
120$ 81.21
LCSCPiece 1$ 41.08
10$ 39.76

Description

General part information

C2M0025120 Series

N-Channel 1200 V 90A (Tc) 463W (Tc) Through Hole TO-247-3

Documents

Technical documentation and resources