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VS-10ETF10-M3 - MBR10H100-E3/45

VS-10ETF10-M3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 10A TO220AC

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VS-10ETF10-M3 - MBR10H100-E3/45

VS-10ETF10-M3

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 10A TO220AC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationVS-10ETF10-M3
Current - Average Rectified (Io)10 A
Current - Reverse Leakage @ Vr100 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseTO-220-2
Reverse Recovery Time (trr)310 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If1.33 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.21
10$ 2.09
100$ 1.45
500$ 1.17
1000$ 1.09
2000$ 1.01

Description

General part information

10ETF10 Series

Diode 1000 V 10A Through Hole TO-220AC

Documents

Technical documentation and resources