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BYV29G-600PQ - I2PAK

BYV29G-600PQ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 9A I2PAK

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BYV29G-600PQ - I2PAK

BYV29G-600PQ

Active
WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 9A I2PAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYV29G-600PQ
Current - Average Rectified (Io)9 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Reverse Recovery Time (trr)75 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-262 (I2PAK)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 6000$ 0.28

Description

General part information

BYV29 Series

Diode 600 V 9A Through Hole TO-262 (I2PAK)

Documents

Technical documentation and resources

No documents available