SCS108AGC

Obsolete

Rohm Semiconductor

DIODE SIL CARB 600V 8A TO220AC

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Obsolete

Rohm Semiconductor

DIODE SIL CARB 600V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SCS108AGC

Capacitance @ Vr, F	345 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	160 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Supplier Device Package	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If
Rohm Semiconductor SCS108AGC	TO-220-2	Through Hole	600 V	SiC (Silicon Carbide) Schottky	345 pF	0 ns	TO-220AC	No Recovery Time	160 µA	175 °C	8 A	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 8A Through Hole TO-220AC

Technical documentation and resources