RP1E090XNTCR

Obsolete

Rohm Semiconductor

MOSFET N-CH 30V 9A MPT6

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Obsolete

Rohm Semiconductor

MOSFET N-CH 30V 9A MPT6

Technical Specifications

Parameters and characteristics for this part

Specification	RP1E090XNTCR

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	MPT6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Operating Temperature	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor RP1E090XNTCR	17 mOhm	2 W	N-Channel	MOSFET (Metal Oxide)	9 A	Surface Mount	2.5 V	4 V	10 V	20 V	150 °C	MPT6	6-SMD Flat Leads	6.8 nC	30 V	440 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 9A (Ta) 2W (Ta) Surface Mount MPT6

Technical documentation and resources