2N5550RLRP

Obsolete

ON Semiconductor

TRANS NPN 140V 0.6A TO92

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DocumentsDatasheet

2N5550RLRP

Obsolete

ON Semiconductor

TRANS NPN 140V 0.6A TO92

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N5550RLRP

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60 hFE
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max)	140 V

2N5550T Series

Small Signal NPN Bipolar Transistor

Part	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Supplier Device Package	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor 2N5550TFR	300 MHz	140 V	NPN	60 hFE	100 nA	150 °C	250 mV	625 mW	TO-92-3	Through Hole	TO-226-3 TO-92-3	600 mA
ON Semiconductor 2N5550TA	300 MHz	140 V	NPN	60 hFE	100 nA	150 °C	250 mV	625 mW	TO-92-3	Through Hole	TO-226-3 TO-92-3	600 mA
ON Semiconductor 2N5550G	300 MHz	140 V	NPN	60 hFE	100 nA		250 mV	625 mW	TO-92	Through Hole	TO-226-3 TO-92-3 Long Body	600 mA	-55 °C	150 °C	TO-226
ON Semiconductor 2N5550TFR	300 MHz	140 V	NPN	60 hFE	100 nA	150 °C	250 mV	625 mW	TO-92-3	Through Hole	TO-226-3 TO-92-3	600 mA
ON Semiconductor 2N5550RLRP	300 MHz	140 V	NPN	60 hFE	100 nA		250 mV	625 mW	TO-92	Through Hole	Formed Leads TO-226-3 TO-92-3 Long Body	600 mA	-55 °C	150 °C	TO-226
ON Semiconductor 2N5550	300 MHz	140 V	NPN	60 hFE	100 nA		250 mV	625 mW	TO-92	Through Hole	TO-226-3 TO-92-3 Long Body	600 mA	-55 °C	150 °C	TO-226
ON Semiconductor 2N5550RLRPG	300 MHz	140 V	NPN	60 hFE	100 nA		250 mV	625 mW	TO-92	Through Hole	Formed Leads TO-226-3 TO-92-3 Long Body	600 mA	-55 °C	150 °C	TO-226
ON Semiconductor 2N5550TA	300 MHz	140 V	NPN	60 hFE	100 nA	150 °C	250 mV	625 mW	TO-92-3	Through Hole	TO-226-3 TO-92-3	600 mA
ON Semiconductor 2N5550RLRAG	300 MHz	140 V	NPN	60 hFE	100 nA		250 mV	625 mW	TO-92	Through Hole	Formed Leads TO-226-3 TO-92-3 Long Body	600 mA	-55 °C	150 °C	TO-226
ON Semiconductor 2N5550BU	300 MHz	140 V	NPN	60 hFE	100 nA	150 °C	250 mV	625 mW	TO-92-3	Through Hole	TO-226-3 TO-92-3	600 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2N5550T Series

The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources