UMF21NTR

NRND

Rohm Semiconductor

TRANS NPN PREBIAS/PNP 0.15W UMT6

Search across all available documentation for this part.

NRND

Rohm Semiconductor

TRANS NPN PREBIAS/PNP 0.15W UMT6

Technical Specifications

Parameters and characteristics for this part

Specification	UMF21NTR

Current - Collector (Ic) (Max)	500 mA, 100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	30, 270
Frequency - Transition	250 MHz, 260 MHz
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	UMT6
Transistor Type	1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic [Max]	300 mV, 250 mV
Voltage - Collector Emitter Breakdown (Max)	12 V, 50 V

Part	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package	Frequency - Transition	Package / Case	Current - Collector (Ic) (Max)	Transistor Type	Mounting Type
Rohm Semiconductor UMF21NTR	10 kOhms	500 nA	12 V 50 V	30 270	250 mV 300 mV	UMT6	250 MHz 260 MHz	6-TSSOP SC-88 SOT-363	100 mA 500 mA	1 NPN Pre-Biased 1 PNP	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 260MHz 150mW Surface Mount UMT6

Technical documentation and resources