ZXMP3A16N8TA

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Diodes Inc

TRANS MOSFET P-CH 30V 6.7A 8-PIN SOIC T/R

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Diodes Inc

TRANS MOSFET P-CH 30V 6.7A 8-PIN SOIC T/R

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMP3A16N8TA

Current - Continuous Drain (Id) @ 25°C	5.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	29.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1022 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

Dual P-Channel Enhancement Mode MOSFET

Part	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration
Diodes Inc ZXMP3A16N8TA	Surface Mount	20 V	30 V	P-Channel	-55 °C	150 °C	1.9 W	5.6 A	40 mOhm	MOSFET (Metal Oxide)	29.6 nC	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	1 V	8-SO	1022 pF
Diodes Inc ZXMP3A16DN8TA	Surface Mount		30 V		-55 °C	150 °C		4.2 A	45 mOhm	MOSFET (Metal Oxide)		8-SOIC	3.9 mm	0.154 in		1 V	8-SO	1022 pF	1.8 W	Logic Level Gate	29.6 nC	2 P-Channel

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General part information

Dual P-Channel Enhancement Mode MOSFET

Technical documentation and resources