2SA1954-A(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 12V 0.5A SC70

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 12V 0.5A SC70

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1954-A(TE85L,F)

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300 hFE
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SC-70, SOT-323
Power - Max [Max]	100 mW
Supplier Device Package	SC-70
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	12 V

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition
Toshiba Semiconductor and Storage 2SA1954BTE85LF	100 mW	100 nA	Surface Mount	125 ¯C	500 mA	PNP	500	SC-70 SOT-323	SC-70	250 mV	12 V	130 MHz
Toshiba Semiconductor and Storage 2SA1954-A(TE85L,F)	100 mW	100 nA	Surface Mount	125 ¯C	500 mA	PNP	300 hFE	SC-70 SOT-323	SC-70	250 mV	12 V	130 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 12 V 500 mA 130MHz 100 mW Surface Mount SC-70

Technical documentation and resources

No documents available