1N485B TR

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 200V 200MA DO41

Search across all available documentation for this part.

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 200V 200MA DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N485B TR

Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	25 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
Central Semiconductor Corp 1N485B BK	DO-41	25 nA	Standard	1 V	Any Speed	200 mA	200 mA	200 C	-65 C	Axial DO-204AL DO-41	Through Hole	200 V
Central Semiconductor Corp 1N485B TR	DO-41	25 nA	Standard	1 V	Any Speed	200 mA	200 mA	200 C	-65 C	Axial DO-204AL DO-41	Through Hole	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 200mA Through Hole DO-41

Technical documentation and resources