VS-35EPF12L-M3

Active

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 35A TO247AD

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 35A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-35EPF12L-M3

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	450 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.47 V

Part	Supplier Device Package	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Grade	Qualification
Vishay General Semiconductor - Diodes Division VS-35EPF12L-M3	TO-247AD	200 mA 500 ns	TO-247-2	1.47 V	450 ns	1.2 kV	35 A	150 °C	-40 °C	Standard	100 µA	Through Hole
Vishay General Semiconductor - Diodes Division VS-35EPF12LHM3	TO-247AD	200 mA 500 ns	TO-247-2	1.47 V	450 ns	1.2 kV	35 A	150 °C	-40 °C	Standard	100 µA	Through Hole	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 1.65

General part information

Diode 1200 V 35A Through Hole TO-247AD

Technical documentation and resources