2SC5242-O(Q)

Active

Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO3P

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5242-O(Q)

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	80
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	130 W
Supplier Device Package	TO-3P(N)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	230 V

Part	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Mounting Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Frequency - Transition
Toshiba Semiconductor and Storage 2SC5242-O(Q)	150 °C	5 µA	TO-3P(N)	Through Hole	3 V	80	15 A	SC-65-3 TO-3P-3	130 W	230 V	NPN	30 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 130 W Through Hole TO-3P(N)

Technical documentation and resources