SMA6010

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Sanken Electric USA Inc.

TRANS 3NPN/3PNP DARL 60V 12SIP

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Sanken Electric USA Inc.

TRANS 3NPN/3PNP DARL 60V 12SIP

Technical Specifications

Parameters and characteristics for this part

Specification	SMA6010

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	2000
Frequency - Transition	75 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	12-SIP
Power - Max [Max]	4 W
Supplier Device Package	12-SIP
Transistor Type	3-Phase Bridge, 3 NPN, 3 PNP Darlington
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Mounting Type	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Supplier Device Package
Sanken Electric USA Inc. SMA6010	Through Hole	3 NPN 3 PNP Darlington 3-Phase Bridge	2000	4 W	60 V	12-SIP	4 A	100 µA	150 °C	1.5 V	75 MHz	12-SIP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlington (3-Phase Bridge) 60V 4A 75MHz 4W Through Hole 12-SIP

Technical documentation and resources