MBR20080CT

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GeneSiC Semiconductor

DIODE MOD SCHOTT 80V 200A 2TOWER

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GeneSiC Semiconductor

DIODE MOD SCHOTT 80V 200A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR20080CT

Current - Average Rectified (Io) (per Diode)	200 A
Current - Reverse Leakage @ Vr	5 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If	840 mV

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Mounting Type	Technology	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Package / Case	Speed
GeneSiC Semiconductor MBR20080CT	Twin Tower	80 V	5 mA	200 A	Chassis Mount	Schottky	840 mV	1 Pair Common Cathode	Twin Tower	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 75.16

General part information

Diode Array 1 Pair Common Cathode 80 V 200A (DC) Chassis Mount Twin Tower

Technical documentation and resources