2SD1766T100Q

NRND

Rohm Semiconductor

TRANS NPN 32V 2A MPT3

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NRND

Rohm Semiconductor

TRANS NPN 32V 2A MPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1766T100Q

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature	Mounting Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]
Rohm Semiconductor 2SD1766T100P	82	100 MHz	NPN	32 V	800 mV	2 A	TO-243AA	150 °C	Surface Mount	2 W	1 µA
Rohm Semiconductor 2SD1766T100Q	120	100 MHz	NPN	32 V	800 mV	2 A	TO-243AA	150 °C	Surface Mount	2 W	1 µA

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General part information

Bipolar (BJT) Transistor NPN 32 V 2 A 100MHz 2 W Surface Mount MPT3

Technical documentation and resources