AOB15B65M1

Alpha & Omega Semiconductor Inc.

IGBT 650V 30A TO263

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Alpha & Omega Semiconductor Inc.

IGBT 650V 30A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB15B65M1

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	45 A
Gate Charge	32 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	214 W
Reverse Recovery Time (trr)	317 ns
Supplier Device Package	TO-263 (D2PAK)
Switching Energy	290 µJ, 200 µJ
Td (on/off) @ 25°C	13 ns, 116 ns
Test Condition	400 V, 15 A, 20 Ohm, 15 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Test Condition	Current - Collector Pulsed (Icm)	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Mounting Type	Gate Charge	Reverse Recovery Time (trr)	Supplier Device Package	Switching Energy	Voltage - Collector Emitter Breakdown (Max)	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic
Alpha & Omega Semiconductor Inc. AOB15B65M1	15 A 15 V 20 Ohm 400 V	45 A	214 W	30 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	32 nC	317 ns	TO-263 (D2PAK)	200 µJ 290 µJ	650 V	13 ns 116 ns	-55 °C	175 ░C
Alpha & Omega Semiconductor Inc. AOB15B60D	15 A 15 V 20 Ohm 400 V	60 A	167 W	30 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	25.4 nC	196 ns	TO-263 (D2PAK)	110 µJ 420 µJ		21 ns 73 ns	-55 °C	150 °C	600 V	1.8 V

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