LTC4444HMS8E#WTRPBF

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Analog Devices

HIGH VOLTAGE SYNCHRONOUS N-CHANNEL MOSFET DRIVER

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LTC4444HMS8E#WTRPBF

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Analog Devices

HIGH VOLTAGE SYNCHRONOUS N-CHANNEL MOSFET DRIVER

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Parameters and characteristics for this part

Specification	LTC4444HMS8E#WTRPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2.5 A
Current - Peak Output (Source, Sink) [custom]	3 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET
Grade	Automotive
High Side Voltage - Max (Bootstrap) [Max]	114 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [custom]	1.85 V
Logic Voltage - VIL, VIH [custom]	3.25 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Exposed Pad, 8-TSSOP, 8-MSOP
Package / Case [custom]	0.118 in, 3 mm
Qualification	AEC-Q100
Rise / Fall Time (Typ) [custom]	5 ns
Rise / Fall Time (Typ) [custom]	8 ns
Supplier Device Package	8-MSOP-EP
Voltage - Supply [Max]	13.5 V
Voltage - Supply [Min]	7.2 V

LTC4444-5 Series

High Voltage Synchronous N-Channel MOSFET Driver

Part	Driven Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Input Type	High Side Voltage - Max (Bootstrap) [Max]	Qualification	Grade	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Package / Case	Package / Case [custom]	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Channel Type	Gate Type
Analog Devices LTC4444HMS8E#WTRPBF	Half-Bridge	150 °C	-40 °C	Non-Inverting	114 V	AEC-Q100	Automotive	7.2 V	13.5 V	Surface Mount	8-MSOP 8-TSSOP Exposed Pad	0.118 in 3 mm	2	5 ns	8 ns	8-MSOP-EP	1.85 V	3.25 V	2.5 A	3 A	Independent	N-Channel MOSFET
Analog Devices LTC4444IMS8E#PBF	Half-Bridge	125 ¯C	-40 °C	Non-Inverting	114 V			7.2 V	13.5 V	Surface Mount	8-MSOP 8-TSSOP Exposed Pad	0.118 in 3 mm	2	5 ns	8 ns	8-MSOP-EP	1.85 V	3.25 V	2.5 A	3 A	Independent	N-Channel MOSFET
Analog Devices LTC4444HMS8E-5#PBF	Half-Bridge	150 °C	-40 °C	Non-Inverting	114 V			4.5 V	13.5 V	Surface Mount	8-MSOP 8-TSSOP Exposed Pad	0.118 in 3 mm	2	5 ns	8 ns	8-MSOP-EP	1.85 V	3.25 V	2.5 A	3 A	Independent	MOSFET (N-Channel) N-Channel MOSFET
Analog Devices LTC4444IMS8E-5#TRPBF	Half-Bridge	125 ¯C	-40 °C	Non-Inverting	114 V			4.5 V	13.5 V	Surface Mount	8-MSOP 8-TSSOP Exposed Pad	0.118 in 3 mm	2	5 ns	8 ns	8-MSOP-EP	1.85 V	3.25 V	2.5 A	3 A	Independent	N-Channel MOSFET
Analog Devices LTC4444EMS8E-5#TRPBF	Half-Bridge	125 ¯C	-40 °C	Non-Inverting	114 V			4.5 V	13.5 V	Surface Mount	8-MSOP 8-TSSOP Exposed Pad	0.118 in 3 mm	2	5 ns	8 ns	8-MSOP-EP	1.85 V	3.25 V	2.5 A	3 A	Independent	N-Channel MOSFET
Analog Devices LTC4444MPMS8E-5#TRPBF	Half-Bridge	150 °C	-55 °C	Non-Inverting	114 V			4.5 V	13.5 V	Surface Mount	8-MSOP 8-TSSOP Exposed Pad	0.118 in 3 mm	2	5 ns	8 ns	8-MSOP-EP	1.85 V	3.25 V	2.5 A	3 A	Independent	N-Channel MOSFET
Analog Devices LTC4444EMS8E-5#PBF	Half-Bridge	125 ¯C	-40 °C	Non-Inverting	114 V			4.5 V	13.5 V	Surface Mount	8-MSOP 8-TSSOP Exposed Pad	0.118 in 3 mm	2	5 ns	8 ns	8-MSOP-EP	1.85 V	3.25 V	2.5 A	3 A	Independent	N-Channel MOSFET
Analog Devices LTC4444MPMS8E#TRPBF	Half-Bridge	150 °C	-55 °C	Non-Inverting	114 V			7.2 V	13.5 V	Surface Mount	8-MSOP 8-TSSOP Exposed Pad	0.118 in 3 mm	2	5 ns	8 ns	8-MSOP-EP	1.85 V	3.25 V	2.5 A	3 A	Independent	N-Channel MOSFET
Analog Devices LTC4444HMS8E-5#TRPBF	Half-Bridge	150 °C	-40 °C	Non-Inverting	114 V			4.5 V	13.5 V	Surface Mount	8-MSOP 8-TSSOP Exposed Pad	0.118 in 3 mm	2	5 ns	8 ns	8-MSOP-EP	1.85 V	3.25 V	2.5 A	3 A	Independent	N-Channel MOSFET

Pricing

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Description

General part information

LTC4444-5 Series

The LTC4444-5 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with high gate capacitance.The LTC4444-5 is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground.The LTC4444-5 contains undervoltage lockout circuits that disable the external MOSFETs when activated. Adaptive shoot-through protection prevents both MOSFETs from conducting simultaneously.ApplicationsDistributed Power ArchitecturesAutomotive Power SuppliesHigh Density Power ModulesTelecommunication Systems

LTC4444HMS8E#WTRPBF

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LTC4444HMS8E#WTRPBF

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LTC4444-5 Series

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LTC4444-5 Series

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LTC4444-5 Series