C4D05120E

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Wolfspeed

DIODE SIL CARB 1.2KV 19A TO252-2

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Wolfspeed

DIODE SIL CARB 1.2KV 19A TO252-2

Technical Specifications

Parameters and characteristics for this part

Specification	C4D05120E

Capacitance @ Vr, F	390 pF
Current - Average Rectified (Io)	19 A
Current - Reverse Leakage @ Vr	150 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-252-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Capacitance @ Vr, F	Speed	Package / Case	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
Wolfspeed C4D05120A	1.2 kV	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	390 pF	No Recovery Time	TO-220-2	Through Hole	19 A	150 µA	1.8 V	TO-220-2
Wolfspeed C4D05120E	1.2 kV	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	390 pF	No Recovery Time	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	19 A	150 µA	1.8 V	TO-252-2
Wolfspeed C4D05120E-TR	1.2 kV	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	390 pF	No Recovery Time	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	19 A	150 µA	1.8 V	TO-252-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 19A Surface Mount TO-252-2

Technical documentation and resources