1N4595R

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GeneSiC Semiconductor

DIODE GP REV 1.2KV 150A DO205AA

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GeneSiC Semiconductor

DIODE GP REV 1.2KV 150A DO205AA

Technical Specifications

Parameters and characteristics for this part

Specification	1N4595R

Current - Average Rectified (Io)	150 A
Current - Reverse Leakage @ Vr	4 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 °C
Operating Temperature - Junction [Min]	-60 °C
Package / Case	Stud, DO-8, DO-205AA
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-8
Supplier Device Package	DO-205AA
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Speed	Speed	Supplier Device Package	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
GeneSiC Semiconductor 1N4595R	Standard Recovery >500ns	200 mA	DO-8	DO-205AA	1.2 kV	DO-205AA DO-8 Stud	Reverse Polarity Standard	4 mA	150 A	1.5 V	Chassis Stud Mount	-60 °C	200 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 150A Chassis, Stud Mount DO-205AA (DO-8)

Technical documentation and resources