GBU1007H

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Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 10A GBU

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Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 10A GBU

Technical Specifications

Parameters and characteristics for this part

Specification	GBU1007H

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case [custom]	4-ESIP, GBU
Qualification	AEC-Q101
Supplier Device Package	GBU
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	1000 V

Part	Voltage - Peak Reverse (Max) [Max]	Mounting Type	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Diode Type	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Package / Case [custom]	Qualification
Taiwan Semiconductor Corporation GBU1007	1000 V	Through Hole	Standard	10 A	5 µA	Single Phase	GBU	4-SIP GBU	1.1 V	-55 °C	150 °C
Taiwan Semiconductor Corporation GBU1007H	1000 V	Through Hole	Standard	10 A	5 µA	Single Phase	GBU		1.1 V	-55 °C	150 °C	Automotive	4-ESIP GBU	AEC-Q101
Taiwan Semiconductor Corporation GBU1007HD2G	1000 V	Through Hole	Standard	10 A	5 µA	Single Phase	GBU	4-SIP GBU	1.1 V	-55 °C	150 °C	Automotive		AEC-Q101

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General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole GBU

Technical documentation and resources