PJQ5462A_R2_00001

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Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5462A_R2_00001

Current - Continuous Drain (Id) @ 25°C	8.5 A, 42 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	2142 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	60 W, 2 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs (Max)	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Panjit International Inc. PJQ5462A_R2_00001	2.5 V	2 W 60 W	8-PowerVDFN	40 nC	N-Channel	20 V	MOSFET (Metal Oxide)	DFN5060-8	12 mOhm	-55 °C	150 °C	8.5 A 42 A	4.5 V 10 V	60 V	Surface Mount	2142 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 8.5A (Ta), 42A (Tc) 2W (Ta), 60W (Tc) Surface Mount DFN5060-8

Technical documentation and resources

No documents available