PJQ2463A_R1_00001

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ2463A_R1_00001

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	785 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	DFN2020B-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
Panjit International Inc. PJQ2463A_R1_00001	-55 °C	150 °C	785 pF	2.5 V	Surface Mount	3.2 A	P-Channel	20 V	10 nC	105 mOhm	60 V	2 W	MOSFET (Metal Oxide)	4.5 V 10 V	DFN2020B-6

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General part information

P-Channel 60 V 3.2A (Ta) 2W (Ta) Surface Mount DFN2020B-6

Technical documentation and resources