UJ3D1250K2

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Qorvo

DIODE SIL CARB 1.2KV 50A TO247-2

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Qorvo

DIODE SIL CARB 1.2KV 50A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	UJ3D1250K2

Capacitance @ Vr, F	2340 pF
Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	400 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Supplier Device Package	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Package / Case	Mounting Type	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F
Qorvo UJ3D1250K2	No Recovery Time	175 ░C	-55 C	400 µA	TO-247-2	50 A	0 ns	TO-247-2	Through Hole	SiC (Silicon Carbide) Schottky	1.2 kV	1.7 V	2340 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 50A Through Hole TO-247-2

Technical documentation and resources

No documents available