TIP125 SL TIN/LEAD

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Central Semiconductor Corp

TRANS NPN DARL 60V 5A TO220-3

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Central Semiconductor Corp

TRANS NPN DARL 60V 5A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	TIP125 SL TIN/LEAD

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1000 hFE
Frequency - Transition	4 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	65 W
Supplier Device Package	TO-220-3
Vce Saturation (Max) @ Ib, Ic	4 V
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Supplier Device Package
Central Semiconductor Corp TIP125 SL TIN/LEAD	500 nA	4 MHz	65 W	4 V	TO-220-3	1000 hFE	150 °C	-65 °C	5 A	60 V	Through Hole	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN - Darlington 60 V 5 A 4MHz 65 W Through Hole TO-220-3

Technical documentation and resources