2SB1181TLR

Rohm Semiconductor

TRANS PNP 80V 1A CPT3

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Rohm Semiconductor

TRANS PNP 80V 1A CPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1181TLR

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	10 W
Supplier Device Package	CPT3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Frequency - Transition	Operating Temperature	Mounting Type	Transistor Type	Package / Case
Rohm Semiconductor 2SB1181TLR	80 V	1 µA	10 W	120	400 mV	1 A	CPT3	100 MHz	150 °C	Surface Mount	PNP	DPAK (2 Leads + Tab) SC-63 TO-252-3

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General part information

Bipolar (BJT) Transistor PNP 80 V 1 A 100MHz 10 W Surface Mount CPT3

Technical documentation and resources

No documents available