BAT42-L0 A0

Obsolete

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 200MA DO35

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Obsolete

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 200MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	BAT42-L0 A0

Capacitance @ Vr, F	7 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	5 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case	Supplier Device Package	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Reverse Recovery Time (trr)
Taiwan Semiconductor Corporation BAT42-L0 R0	30 V	500 nA	Through Hole	Axial DO-204AH DO-35	DO-35	Any Speed	200 mA	1 V	Schottky	125 °C	-65 C	200 mA	7 pF	5 ns
Taiwan Semiconductor Corporation BAT42-L0 A0	30 V	500 nA	Through Hole	Axial DO-204AH DO-35	DO-35	Any Speed	200 mA	1 V	Schottky	125 °C	-65 C	200 mA	7 pF	5 ns
Taiwan Semiconductor Corporation BAT42W RHG	30 V	500 nA	Surface Mount	SOD-123	SOD-123	Any Speed	200 mA	1 V	Schottky	125 °C	-55 °C	200 mA	10 pF	5 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 30 V 200mA Through Hole DO-35

Technical documentation and resources

No documents available