DSEP12-12B

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IXYS

DIODE GEN PURP 1.2KV 15A TO220AC

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IXYS

DIODE GEN PURP 1.2KV 15A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	DSEP12-12B

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	3.25 V

Part	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Technology	Current - Average Rectified (Io)	Capacitance @ Vr, F
IXYS DSEP12-12B	100 µA	35 ns	TO-220-2	TO-220AC	1.2 kV	200 mA 500 ns	175 ░C	-55 C	3.25 V	Through Hole	Standard	15 A
IXYS DSEP12-12AZ-TUB	100 µA	40 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263HV	1.2 kV	200 mA 500 ns	175 ░C	-55 C	2.62 V	Surface Mount	Standard	12 A	5 pF
IXYS DSEP12-12BZ-TUB	100 µA	70 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263HV	1.2 kV	200 mA 500 ns	175 ░C	-55 C	3.25 V	Surface Mount	Standard	12 A	5 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 15A Through Hole TO-220AC

Technical documentation and resources