BC337-40 A1G

Obsolete

Taiwan Semiconductor Corporation

TRANS NPN 45V 0.8A TO92

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

TRANS NPN 45V 0.8A TO92

Technical Specifications

Parameters and characteristics for this part

Specification	BC337-40 A1G

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Transistor Type
Taiwan Semiconductor Corporation BC337-40 A1G	800 mA	625 mW	100 MHz	100 nA	TO-226-3 TO-92-3	TO-92	45 V	700 mV	-55 °C	150 °C	250	Through Hole	NPN
Taiwan Semiconductor Corporation BC337-16 A1G	800 mA	625 mW	100 MHz	100 nA	TO-226-3 TO-92-3	TO-92	45 V	700 mV	-55 °C	150 °C	100 hFE	Through Hole	NPN
Taiwan Semiconductor Corporation BC337-25 A1G	800 mA	625 mW	100 MHz	100 nA	TO-226-3 TO-92-3	TO-92	45 V	700 mV	-55 °C	150 °C	160	Through Hole	NPN
Taiwan Semiconductor Corporation BC337-16 B1G	800 mA	625 mW	100 MHz	100 nA	TO-226-3 TO-92-3	TO-92	45 V	700 mV	-55 °C	150 °C	100 hFE	Through Hole	NPN
Taiwan Semiconductor Corporation BC337-25 B1G	800 mA	625 mW	100 MHz	100 nA	TO-226-3 TO-92-3	TO-92	45 V	700 mV	-55 °C	150 °C	160	Through Hole	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 45 V 800 mA 100MHz 625 mW Through Hole TO-92

Technical documentation and resources