RQ6C065BCTCR
ActiveRohm Semiconductor
MOSFET, P-CH, -20V, -6.5A, SOT-457T
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RQ6C065BCTCR
ActiveRohm Semiconductor
MOSFET, P-CH, -20V, -6.5A, SOT-457T
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ6C065BCTCR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1520 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power Dissipation (Max) [Max] | 1.25 W |
| Rds On (Max) @ Id, Vgs | 21 mOhm |
| Supplier Device Package | TSMT6 (SC-95) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ6C065BC Series
RQ6C065BC is high power small mold package(HSMT8) MOSFET for switching application.
Documents
Technical documentation and resources