SGS5N60RUFDTU

Obsolete

ON Semiconductor

IGBT, 8A, 600V, N-CHANNEL

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Obsolete

ON Semiconductor

IGBT, 8A, 600V, N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	SGS5N60RUFDTU

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Pulsed (Icm)	15 A
Gate Charge	16 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	35 W
Reverse Recovery Time (trr)	55 ns
Supplier Device Package	TO-220F-3
Switching Energy	107 µJ, 88 µJ
Td (on/off) @ 25°C	34 ns, 13 ns
Test Condition	15 V, 300 V, 40 Ohm, 5 A
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Gate Charge	Current - Collector Pulsed (Icm)	Test Condition	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Power - Max [Max]
ON Semiconductor SGS5N60RUFDTU	2.8 V	600 V	Through Hole	TO-220F-3	8 A	16 nC	15 A	5 A 15 V 40 Ohm 300 V	88 µJ 107 µJ	-55 °C	150 °C	TO-220-3 Full Pack	55 ns	13 ns 34 ns	35 W
ON Semiconductor SGS5N60RUFDTU	2.8 V	600 V	Through Hole	TO-220F-3	8 A	16 nC	15 A	5 A 15 V 40 Ohm 300 V	88 µJ 107 µJ	-55 °C	150 °C	TO-220-3 Full Pack	55 ns	13 ns 34 ns	35 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 600 V 8 A 35 W Through Hole TO-220F-3

Technical documentation and resources