MBR10200

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 10A TO220AC

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 10A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	MBR10200

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.05 V

Part	Voltage - Forward (Vf) (Max) @ If	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Diode Configuration	Speed	Grade	Mounting Type	Current - Average Rectified (Io) (per Diode)	Current - Average Rectified (Io)	Speed
Taiwan Semiconductor Corporation MBR10200CTH	980 mV	AEC-Q101	200 V	150 °C	-55 °C	TO-220-3	Schottky	TO-220AB	100 µA	1 Pair Common Cathode	200 mA 500 ns	Automotive	Through Hole	10 A
Taiwan Semiconductor Corporation MBR10200CTC0	980 mV		200 V	150 °C	-55 °C	TO-220-3	Schottky	TO-220AB	100 µA	1 Pair Common Cathode	200 mA 500 ns		Through Hole	10 A
Taiwan Semiconductor Corporation MBR10200 C0G	1.05 V		200 V	150 °C	-55 °C	TO-220-2	Standard	TO-220AC	100 µA		200 mA		Through Hole		10 A	Standard Recovery >500ns
Taiwan Semiconductor Corporation MBR10200	1.05 V		200 V	150 °C	-55 °C	TO-220-2	Schottky	TO-220AC	100 µA		200 mA 500 ns		Through Hole		10 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Diode 200 V 10A Through Hole TO-220AC

Technical documentation and resources