VS-10ETF12THM3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 10A TO220AC

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 10A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-10ETF12THM3

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	310 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.33 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Grade	Supplier Device Package	Speed	Package / Case	Reverse Recovery Time (trr)	Technology	Qualification
Vishay General Semiconductor - Diodes Division VS-10ETF12THM3	150 °C	-40 °C	1.33 V	1.2 kV	10 A	100 µA	Through Hole	Automotive	TO-220AC	200 mA 500 ns	TO-220-2	310 ns	Standard	AEC-Q101
Vishay General Semiconductor - Diodes Division VS-10ETF12S-M3	150 °C	-40 °C	1.33 V	1.2 kV	10 A	100 µA	Surface Mount		TO-263AB (D2PAK)	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	310 ns	Standard
Vishay General Semiconductor - Diodes Division VS-10ETF12-M3	150 °C	-40 °C	1.33 V	1.2 kV	10 A	100 µA	Through Hole		TO-220AC	200 mA 500 ns	TO-220-2	310 ns	Standard

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General part information

Diode 1200 V 10A Through Hole TO-220AC

Technical documentation and resources