CDM3-800 TR13 PBFREE

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Central Semiconductor Corp

MOSFET N-CH 800V 3A DPAK

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Central Semiconductor Corp

MOSFET N-CH 800V 3A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	CDM3-800 TR13 PBFREE

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	415 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	4.8 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
Central Semiconductor Corp CDM3-800 TR13 PBFREE	30 V	10 V	MOSFET (Metal Oxide)	3 A	800 V	80 W	4.8 Ohm	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	Surface Mount	415 pF	-55 °C	150 °C	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 3A (Tc) 80W (Tc) Surface Mount DPAK

Technical documentation and resources