IRF710

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Harris Corporation

PFET, 2A I(D), 400V, 3.6OHM, 1-E

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Harris Corporation

PFET, 2A I(D), 400V, 3.6OHM, 1-E

Technical Specifications

Parameters and characteristics for this part

Specification	IRF710

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	135 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs	3.6 Ohm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case
Harris Corporation IRF710	-55 °C	150 °C	2 A	MOSFET (Metal Oxide)	Through Hole	10 V	N-Channel	36 W	3.6 Ohm	135 pF	12 nC	20 V	TO-220AB	400 V	4 V	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 400 V 2A (Tc) 36W (Tc) Through Hole TO-220AB

Technical documentation and resources

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