PJD3NA80_L2_00001

NRND

Panjit International Inc.

800V N-CHANNEL MOSFET

Search across all available documentation for this part.

NRND

Panjit International Inc.

800V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJD3NA80_L2_00001

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	406 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	4.8 Ohm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Power Dissipation (Max)
Panjit International Inc. PJD3NA80_L2_00001	TO-252	MOSFET (Metal Oxide)	-55 °C	150 °C	11 nC	4 V	3 A	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	800 V	4.8 Ohm	406 pF	N-Channel	Surface Mount	80 W

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General part information

N-Channel 800 V 3A (Ta) 80W (Tc) Surface Mount TO-252

Technical documentation and resources

No documents available