71V67703S80BGG8

Obsolete

Renesas Electronics Corporation

3.3V 256K X 36 SYNCHRONOUS 3.3V I/O FLOW-THROUGH SRAM

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71V67703S80BGG8

Obsolete

Renesas Electronics Corporation

3.3V 256K X 36 SYNCHRONOUS 3.3V I/O FLOW-THROUGH SRAM

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Technical Specifications

Parameters and characteristics for this part

Specification	71V67703S80BGG8

Access Time	8 ns
Clock Frequency	100 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization [custom]	36
Memory Organization [custom]	256 K
Memory Size	9 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	119-BGA
Supplier Device Package	119-PBGA (14x22)
Technology	SRAM - Synchronous, SDR
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

71V67703 Series

3.3V 256K x 36 Synchronous 3.3V I/O Flow-Through SRAM

Part	Memory Format	Voltage - Supply [Max]	Voltage - Supply [Min]	Clock Frequency	Access Time	Package / Case	Mounting Type	Memory Interface	Memory Size	Operating Temperature [Max]	Operating Temperature [Min]	Memory Type	Memory Organization [custom]	Memory Organization [custom]	Supplier Device Package	Technology
Renesas Electronics Corporation 71V67703S75PFGI	SRAM	3.465 V	3.135 V	117 MHz	7.5 ns	100-LQFP	Surface Mount	Parallel	9 Mbit	85 °C	-40 °C	Volatile	36	256 K	100-TQFP (14x14)	SRAM - Synchronous SDR
Renesas Electronics Corporation 71V67703S80PFGI	SRAM	3.465 V	3.135 V	100 MHz	8 ns	100-LQFP	Surface Mount	Parallel	9 Mbit	85 °C	-40 °C	Volatile	36	256 K	100-TQFP (14x14)	SRAM - Synchronous SDR
Renesas Electronics Corporation 71V67703S80PFGI8	SRAM	3.465 V	3.135 V	100 MHz	8 ns	100-LQFP	Surface Mount	Parallel	9 Mbit	85 °C	-40 °C	Volatile	36	256 K	100-TQFP (14x14)	SRAM - Synchronous SDR
Renesas Electronics Corporation 71V67703S80BGG	SRAM	3.465 V	3.135 V	100 MHz	8 ns	119-BGA	Surface Mount	Parallel	9 Mbit	70 °C	0 °C	Volatile	36	256 K	119-PBGA (14x22)	SRAM - Synchronous SDR
Renesas Electronics Corporation 71V67703S80BGGI8	SRAM	3.465 V	3.135 V	100 MHz	8 ns	119-BGA	Surface Mount	Parallel	9 Mbit	85 °C	-40 °C	Volatile	36	256 K	119-PBGA (14x22)	SRAM - Synchronous SDR
Renesas Electronics Corporation 71V67703S80BGG8	SRAM	3.465 V	3.135 V	100 MHz	8 ns	119-BGA	Surface Mount	Parallel	9 Mbit	70 °C	0 °C	Volatile	36	256 K	119-PBGA (14x22)	SRAM - Synchronous SDR
Renesas Electronics Corporation 71V67703S75BG	SRAM	3.465 V	3.135 V	117 MHz	7.5 ns	119-BGA	Surface Mount	Parallel	9 Mbit	70 °C	0 °C	Volatile	36	256 K	119-PBGA (14x22)	SRAM - Synchronous SDR
Renesas Electronics Corporation 71V67703S85BQ8	SRAM	3.465 V	3.135 V	87 MHz		165-TBGA	Surface Mount	Parallel	9 Mbit	70 °C	0 °C	Volatile	36	256 K	165-CABGA (13x15)	SRAM - Synchronous SDR
Renesas Electronics Corporation 71V67703S75PFG	SRAM	3.465 V	3.135 V	117 MHz	7.5 ns	100-LQFP	Surface Mount	Parallel	9 Mbit	70 °C	0 °C	Volatile	36	256 K	100-TQFP (14x14)	SRAM - Synchronous SDR
Renesas Electronics Corporation 71V67703S80BQ8	SRAM	3.465 V	3.135 V	100 MHz	8 ns	165-TBGA	Surface Mount	Parallel	9 Mbit	70 °C	0 °C	Volatile	36	256 K	165-CABGA (13x15)	SRAM - Synchronous SDR

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71V67703 Series

The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

Documents

Technical documentation and resources

Datasheet

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Datasheet

71V67703/903 Datasheet

Datasheet