SI9926DY

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ON Semiconductor

MOSFET 2N-CH 20V 6.5A 8SOIC

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Active

ON Semiconductor

MOSFET 2N-CH 20V 6.5A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI9926DY

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Configuration	Drain to Source Voltage (Vdss)
ON Semiconductor SI9926DY	30 mOhm	1.5 V	Surface Mount	10 nC	6.5 A	700 pF	8-SOIC	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	900 mW	2 N-Channel (Dual)	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1268	$ 0.24

General part information

Mosfet Array 20V 6.5A (Ta) 900mW (Ta) Surface Mount 8-SOIC

Technical documentation and resources

No documents available