BCY59-IX PBFREE

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Central Semiconductor Corp

TRANSISTOR: NPN; BIPOLAR; 45V; 0.1A; 1W; TO18

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Active

Central Semiconductor Corp

TRANSISTOR: NPN; BIPOLAR; 45V; 0.1A; 1W; TO18

Technical Specifications

Parameters and characteristics for this part

Specification	BCY59-IX PBFREE

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	630
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Package / Case	TO-18-3 Metal Can, TO-206AA
Power - Max [Max]	1 W
Supplier Device Package	TO-18
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

Part	Mounting Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Central Semiconductor Corp BCY59-VII PBFREE	Through Hole	1 W	0.01 µA	120	NPN	TO-18-3 Metal Can TO-206AA	45 V	TO-18	100 mA	150 MHz	700 mV
Central Semiconductor Corp BCY59-IX PBFREE	Through Hole	1 W	0.01 µA		NPN	TO-18-3 Metal Can TO-206AA	45 V	TO-18	100 mA	150 MHz	700 mV	630
Central Semiconductor Corp BCY59-X PBFREE	Through Hole	1 W	0.01 µA		NPN	TO-18-3 Metal Can TO-206AA	45 V	TO-18	100 mA	150 MHz	700 mV	380

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 45 V 100 mA 150MHz 1 W Through Hole TO-18

Technical documentation and resources