EM63B165TS-5ISG
ActiveEtron Technology, Inc.
IC DRAM 512MBIT PAR 54TSOP II
Deep-Dive with AI
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EM63B165TS-5ISG
ActiveEtron Technology, Inc.
IC DRAM 512MBIT PAR 54TSOP II
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | EM63B165TS-5ISG |
|---|---|
| Access Time | 4.5 ns |
| Clock Frequency | 200 MHz |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 32M x 16 |
| Memory Size | 64 MB |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Supplier Device Package | 54-TSOP II |
| Technology | SDRAM |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 3 V |
| Write Cycle Time - Word, Page | 10 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 1000 | $ 6.48 | |
Description
General part information
EM63B165 Series
SDRAM Memory IC 512Mbit Parallel 200 MHz 4.5 ns 54-TSOP II
Documents
Technical documentation and resources
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