2SC5439(F)

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 450V 8A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 450V 8A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5439(F)

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	14
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220NIS
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	450 V

Part	Package / Case	Operating Temperature	Power - Max [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage 2SC5439(F)	TO-220-3 Full Pack	150 °C	2 W	NPN	14	100 µA	450 V	Through Hole	TO-220NIS	1 V	8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 450 V 8 A 2 W Through Hole TO-220NIS

Technical documentation and resources

No documents available