1N6482-E3/96

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 1A DO213AB

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 1A DO213AB

Technical Specifications

Parameters and characteristics for this part

Specification	1N6482-E3/96

Capacitance @ Vr, F	8 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-213AB, MELF (Glass)
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-213AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Mounting Type	Capacitance @ Vr, F
Vishay General Semiconductor - Diodes Division 1N6482-E3/96	10 µA	DO-213AB MELF (Glass)	175 ░C	-65 C	Standard Recovery >500ns	200 mA	1 A	1.1 V	600 V	DO-213AB	Standard	Surface Mount	8 pF
Vishay General Semiconductor - Diodes Division 1N6482-E3/97	10 µA	DO-213AB MELF (Glass)	175 ░C	-65 C	Standard Recovery >500ns	200 mA	1 A	1.1 V	600 V	DO-213AB	Standard	Surface Mount	8 pF
Vishay General Semiconductor - Diodes Division 1N6482HE3/97	10 µA	DO-213AB MELF (Glass)	175 ░C	-65 C	Standard Recovery >500ns	200 mA	1 A	1.1 V	600 V	DO-213AB	Standard	Surface Mount	8 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 1A Surface Mount DO-213AB

Technical documentation and resources