PJE8400_R1_00001

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Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

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Active

Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJE8400_R1_00001

Current - Continuous Drain (Id) @ 25°C	1.1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-523
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs [Max]	88 mOhm
Supplier Device Package	SOT-523
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max) [Max]
Panjit International Inc. PJE8400_R1_00001	SOT-523	MOSFET (Metal Oxide)	88 mOhm	1.2 V	12 V	1.1 A	350 pF	-55 °C	150 °C	Surface Mount	4.6 nC	SOT-523	20 V	1.8 V 4.5 V	N-Channel	300 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 1.1A (Ta) 300mW (Ta) Surface Mount SOT-523

Technical documentation and resources