1N5407G-T

Active

Diodes Inc

RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 3A, 800V V(RRM), SILICON, DO-201AD, PLASTIC PACKAGE-2

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Active

Diodes Inc

RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 3A, 800V V(RRM), SILICON, DO-201AD, PLASTIC PACKAGE-2

Technical Specifications

Parameters and characteristics for this part

Specification	1N5407G-T

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	2 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

standard rectifier

Part	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Technology	Speed	Speed	Capacitance @ Vr, F	Reverse Recovery Time (trr)
Diodes Inc 1N5407-B	1 V	150 °C	-65 C	DO-201AD	10 µA	DO-201AD Axial	800 V	Through Hole	3 A	Standard	Standard Recovery >500ns	200 mA	25 pF
Diodes Inc 1N5407-T	1 V	150 °C	-65 C	DO-201AD	10 µA	DO-201AD Axial	800 V	Through Hole	3 A	Standard	Standard Recovery >500ns	200 mA	25 pF
Diodes Inc 1N5407G-T	1.1 V	150 °C	-65 C	DO-201AD	5 µA	DO-201AD Axial	800 V	Through Hole	3 A	Standard	Standard Recovery >500ns	200 mA	40 pF	2 µs

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